This article presents the basic analysis and design equations of a 2-transistor configuration using both polarities of transistors: the “complementary” two-BJT configuration. Transistor combinations ...

The basic construction of Bipolar Junction Transistor (BJT) comprises of two P-N junctions producing three connecting terminals with each terminal being given a name to identify it from the other two.

Field-effect transistors (FETs) are the cornerstone of modern electronic devices, providing the essential functionality for digital logic, analog processing and power management. The fundamental ...

The great advancements achieved in recent years by organic materials science prompted the development of devices such as organic light-emitting diodes (OLEDs), solar cells, electro-chemical cells, ...

Scientists have made a layer-by-layer etching in superconducting FeSe films down to approximately one-monolayer about 0.6 nm using classical electrochemical reaction in electric-double-layer ...

(Nanowerk Spotlight) For years it has been known that scaling bulk silicon transistors would be extremely challenging, if not impossible, when lengths close in on 15 nm. Already, attention has turned ...

The power factor corrector (PFC) front end of an off-line power supply is subject to the operating frequency limitation caused by the Miller Effect of its associated power MOSFET. This effect is a ...